The method of C-V analysis is a powerful technique to determine the parameter of MOS (metal oxide semiconductor) structure. In this study, we fabricate the MOS structure with rf magnetron sputtering of Ta2O5 on n-ZnSe surface.
The n-ZnSe¡¦s with various carrier concentrations have different electrical property. Interfaces of various Ta2O5/ZnSe have different properties, for examples flatband voltage, threshold voltage, the mobile oxide charge density, and the effective oxide charge concentration and etc. We find that the interfaces of the Ta2O5/ZnSe MOS structure have low mobile charges and interface trap charges. Thus Ta2O5/ZnSe MOS structure may be worthy to develop further.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0725102-135642 |
| Date | 25 July 2002 |
| Creators | Chen, Wei-Shin |
| Contributors | Y-T Lu, Li-Wei Tu, Tsong-Sheng Lay, Tao-Yuan Chang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725102-135642 |
| Rights | unrestricted, Copyright information available at source archive |
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