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Surface and Interfacial Studies of Metal-Organic Chemical Vapor Deposition of Copper

The nucleation and successful growth of copper (Cu) thin films on diffusion barrier/adhesion promoter substrates during metal-organic chemical vapor deposition (MOCVD) are strongly dependent on the initial Cu precursor-substrate chemistry and surface conditions such as organic contamination and oxidation. This research focuses on the interactions of bis(1,1,1,5,5,5-hexafluoroacetylacetonato)copper(II), [Cu(hfac)2], with polycrystalline tantalum (Ta) and polycrystalline as well as epitaxial titanium nitride (TiN) substrates during Cu MOCVD, under ultra-high vacuum (UHV) conditions and low substrate temperatures (T < 500 K). The results obtained from X-ray photoelectron
spectroscopy (XPS), Auger Electron Spectroscopy (AES) and Temperature Programmed Desorption (TPD) measurements indicate substantial differences in the chemical reaction pathways of metallic Cu formation from Cu(hfac)2 on TiN versus Ta surfaces.

Identiferoai:union.ndltd.org:unt.edu/info:ark/67531/metadc278058
Date12 1900
CreatorsNuesca, Guillermo M.
ContributorsKelber, Jeffry Alan, 1952-, Richmond, Michael G., Chyan, Oliver Ming-Ren, Acree, William E. (William Eugene), Pinizzotto, Russell F.
PublisherUniversity of North Texas
Source SetsUniversity of North Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis or Dissertation
Formatx, 147 leaves : ill., Text
RightsPublic, Copyright, Copyright is held by the author, unless otherwise noted. All rights reserved., Nuesca, Guillermo M.

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