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Nonlinear Characteristics of InGaAs PHEMT with Volterra Series Analysis

This thesis studies the nonlinear characteristics of microwave devices by Volterra series because it can analyze the nonlinear devices with memory. And a nonlinear model was established by measurement data for Volterra series analysis. This content is composed of three parts. The first part devote to introduce the nonlinear phenomenon and theories of nonlinear analysis. The difference between power series and Volterra series could be realized by deriving them. The second part is to introduce the physical characteristics of pHEMTs and demonstrate the procedure of establishing small signal model and fitting nonlinear equations of currents and capacitances, and a process of nonlinear model analysis by Volterra series is shown. The third part is to describe the experimental arrangements and analyze nonlinear characteristics of pHEMTs actually with above methods. And the relationship among nonlinear sources was discussed. The device was fabricated by WIN 0.15£gm InGaAs process and measured by on wafer measurements.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0902109-112806
Date02 September 2009
CreatorsYu, Shao-wei
ContributorsWen-Liang Li, Ken-Huang Lin, Chih-Wen Kuo, Tzyy-Sheng Horng, Chie-In Lee
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902109-112806
Rightsnot_available, Copyright information available at source archive

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