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Solid source molecular beam epitaxy of InP-based composite-channel high electron mobility transistor structures of microwave and millimeter-wave power applications

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Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/14859
Date08 1900
CreatorsKim, Tong-Ho
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Detected LanguageEnglish
TypeDissertation
RightsAccess restricted to authorized Georgia Tech users only.

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