In this thesis, we discuss the structural properties and quality of GaN-based material structures grown on sapphire¡BLAO and silicon substrates by X ray diffraction pattern.
According to 2theta scan, we estimate the Al and In concentration in AlGaN and InGaN films. The thickness of InGaN/GaN multiple quantum wells can also be got from 2
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0912106-162925 |
| Date | 12 September 2006 |
| Creators | Huang, Yi-chao |
| Contributors | Wei-Kuan Hung, Chien-Cheng Kuo, Da-ren Hang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0912106-162925 |
| Rights | campus_withheld, Copyright information available at source archive |
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