Leung Yee Pan = 利用有機金屬化學氣相沉積方法生長一維硒化鋅鈉米結構 / 梁懿斌. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2004. / Includes bibliographical references (leaves 80-82). / Text in English; abstracts in English and Chinese. / Leung Yee Pan = li yong you ji jin shu hua xue qi xiang chen ji fang fa sheng chang yi wei xi hua xin na mi jie gou / Liang Yibin. / Acknowledgements --- p.ii / Abstract --- p.iii / Chapter Chapter 1 - --- Introduction --- p.1 / Chapter 1.1 --- Background --- p.1 / Chapter 1.2 --- Motivation --- p.3 / Chapter 1.2.1 --- ZnSe --- p.3 / Chapter 1.2.2 --- MOCVD --- p.3 / Chapter 1.3 --- Our Work --- p.4 / Chapter Chapter 2 - --- Experiment --- p.5 / Chapter 2.1 --- MOCVD System --- p.5 / Chapter 2.2 --- Metalorganic Sources --- p.5 / Chapter 2.3 --- Substrates --- p.7 / Chapter 2.4 --- Substrate Preparations --- p.7 / Chapter 2.5 --- Preheating (Applied Only when Using GaAs Substrates) --- p.7 / Chapter 2.6 --- Growth of Epi-layer (Applied Only when Using GaAs Substrates) --- p.8 / Chapter 2.7 --- Growth of ZnSe Nanowires on Si(100) and ZnSe/GaAs(100) --- p.8 / Chapter 2.8 --- The Samples --- p.9 / Chapter Chapter 3 - --- Characterization --- p.10 / Chapter 3.1 --- Surface Morphologies --- p.10 / Chapter 3.1.1 --- Scanning Electron Microscopy --- p.10 / Chapter 3.1.2 --- Atomic Force Microscopy --- p.12 / Chapter 3.2 --- Structural Properties - X-Ray Diffraction --- p.13 / Chapter 3.3 --- Optical Properties - Photoluminescence --- p.15 / Chapter 3.4 --- Other Techniques --- p.16 / Chapter Chapter 4 - --- Results --- p.17 / Chapter 4.1 --- ZnSe Nanowires Grown on Si(100) --- p.17 / Chapter 4.1.1 --- Effect of Growth Temperature --- p.17 / Chapter 4.2 --- Growth of ZnSe Nanowires on GaAs( 100) - The First Trial --- p.20 / Chapter 4.3 --- Optimizing the ZnSe Epi-layer --- p.21 / Chapter 4.3.1 --- Surface of GaAs(100) --- p.21 / Chapter 4.3.2 --- ZnSe Epi-layer Grown at Different Reactor Pressures --- p.22 / Chapter 4.4 --- Importance of Au --- p.26 / Chapter 4.5 --- Growth of ZnSe Nanowires on GaAs(lOO) - A Systematic Study --- p.28 / Chapter 4.5.1 --- Growth Rates --- p.28 / Chapter 4.5.2 --- Overall Morphologies --- p.32 / Chapter 4.5.3 --- Classifying the Morphologies --- p.37 / Chapter 4.5.4 --- Abundances of Different Morphologies of Different Samples --- p.40 / Chapter 4.5.5 --- Growth Direction --- p.45 / Chapter 4.5.6 --- Structure of the Nanowires --- p.50 / Chapter 4.5.7 --- Optical Properties of the Nanowires --- p.54 / Chapter Chapter 5 - --- Discussions --- p.57 / Chapter 5.1 --- Overview of the MOCVD Process --- p.57 / Chapter 5.1.1 --- Effects of Growth Temperature on Growth Rate of MOCVD --- p.58 / Chapter 5.1.2 --- Effects of Reactor Pressure on Growth Rate of MOCVD --- p.59 / Chapter 5.2 --- Effect of Reactor Pressure on the Growth Rate of the Nanowires --- p.60 / Chapter 5.3 --- Growth Mechanisms of the Nanowires --- p.64 / Chapter 5.3.1 --- VLS Mechanism --- p.64 / Chapter 5.3.2 --- Spiral Growth Mechanism --- p.66 / Chapter 5.3.3 --- Reentrant Corner Mechanism --- p.67 / Chapter 5.3.4 --- Roles of Au Particles and ZnSe Epi-layer --- p.68 / Chapter 5.3.5 --- Growth Mechanisms of Different Types of Nanowires --- p.69 / Chapter 5.3.6 --- Effect of Growth Temperature --- p.71 / Chapter 5.4 --- Quality of the Nanowires --- p.72 / Chapter 5.5 --- "Remarks of the AFM Experiments and the ""Transferred"" Samples" --- p.72 / Chapter Chapter 6 - --- Conclusions --- p.75 / Appendices --- p.77 / Chapter I - --- "Estimation of the mass, other than the nanowires, contributed to the sample" --- p.77 / Chapter II - --- Calculation of the growth angle with respect to the surface normal --- p.78 / References --- p.80
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_324798 |
| Date | January 2004 |
| Contributors | Leung, Yee Pan., Chinese University of Hong Kong Graduate School. Division of Physics. |
| Source Sets | The Chinese University of Hong Kong |
| Language | English, Chinese |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, vi, 82 leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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