Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals. Also known as memristors, these devices are potential candidates for a next-generation replacement for flash memory. In this thesis, bipolar resistive switching is reported for the first time in solution-deposited zinc-tin-oxide (ZTO). The impact of the compliance current on device operation, including the SET and RESET voltages, pre-SET, RESET and post-RESET currents, the resistance ratio between the low and high resistance states, retention, and the endurance, is investigated for an isolated Al dot/ZTO/Ir blanket device and for Al/ZTO/Pt crossbar RRAM devices. A gradual forming process is devised to improve device stability and performance. It is found that the device performance depends critically on the compliance current density that is used to limit the breakdown conduction during the SET operation. In addition, it was found that the conduction and switching mechanisms are consistent with the filament model of formation and rupture of conductive filaments. / Graduation date: 2012
| Identifer | oai:union.ndltd.org:ORGSU/oai:ir.library.oregonstate.edu:1957/26622 |
| Date | 20 December 2011 |
| Creators | Murali, Santosh |
| Contributors | Conley, John F. Jr |
| Source Sets | Oregon State University |
| Language | en_US |
| Detected Language | English |
| Type | Thesis/Dissertation |
Page generated in 0.0019 seconds