Titanium dioxide, TiO2, has potential applications as a photoelectrode for photoelectrochemical generation of hydrogen by splitting water using solar energy and as a photocatalyst for water purification. This study is part of the UNSW research program to process TiO2-based oxide semiconductors as high-performance photoelectrodes and photocatalysts. This study investigates the effect of defect disorder on semiconducting properties of polycrystalline TiO2. This study involved the processing of high-purity polycrystalline TiO2 and determination of its semiconducting properties through measurement of electrical conductivity and thermoelectric power at elevated temperatures (1073-1323K) in controlled oxygen activities [1x10-13 Pa < p(O2) < 75 kPa]. The study included two types of experiments: Determination of electrical properties under conditions of gas/solid equilibrium. The data obtained was used to derive defect disorder and related semiconducting properties Monitoring of electrical properties during equilibration. This data was used to determine the chemical diffusion coefficient. The data obtained under equilibrium conditions indicates that oxygen may be used as a dopant to impose controlled semiconducting properties. In reduced conditions TiO2 is an n-type semiconductor and under oxidizing conditions TiO2 is a p-type semiconductor. The n-type behaviour is associated with oxygen vacancies as the predominant defects and titanium interstitials as the minority defects. The p-type behaviour is closely related to titanium vacancies that are formed during prolonged oxidation. Charge transport at elevated temperature was shown to involve substantial contribution from ions. Analysis of electrical properties enabled determination of several defect-related quantities including the activation enthalpy for oxygen vacancy formation, and the activation energy of the electrical conductivity components related to electrons, holes and ions. The kinetic data obtained during gas/solid equilibration enabled determination of the chemical diffusion coefficient which exhibited a complex dependence on nonstoichiometry. In addition, prolonged oxidation showed that equilibration occurred in two kinetic regimes. One for highly mobile oxygen vacancies and titanium interstitials which quickly reached an ??operational equilibrium?? within hours and another slow kinetic regime for equilibration of titanium vacancies over many thousand hours. The determined chemical diffusion coefficient data may be used to select the processing conditions required to impose uniform concentration of defects within a TiO2.
| Identifer | oai:union.ndltd.org:ADTP/189605 |
| Date | January 2008 |
| Creators | Burg, Tristan Kevin, Materials Science & Engineering, Faculty of Science, UNSW |
| Publisher | Publisher:University of New South Wales. Materials Science & Engineering |
| Source Sets | Australiasian Digital Theses Program |
| Language | English |
| Detected Language | English |
| Rights | http://unsworks.unsw.edu.au/copyright, http://unsworks.unsw.edu.au/copyright |
Page generated in 0.0026 seconds