Future electronic devices having dimensions on the nanometer scale will rely on the resultant quantum effects for their operation. In this project, these quantum effects were investigated through the theoretical modeling and computer simulation of a confined twodimensional electron gas in a semiconductor heterostructure. Assuming hardwall boundaries and sharp geometrical features, the nanostructure conductance has been calculated by finding transverse eigenvalues and eigenfunctions, computing hopping integrals for a one-dimensional tight binding lattice, determining the Greens' propagators, and then finally evaluating the transmittance. From the transmittance, the conductance was determined.A structured and modular computer program in FORTRAN was developed to investigate the effects of geometrical modifications on the conductance of ballistic nanochannels. The program has been designed in such a way that the user need only supply the nanostructure specifications to an input data file. The program then uses this data file to perform the calculations. A separate, user-friendly program has been developed to form the data file. The program is such that additions and modifications can be easily made in the future. / Department of Physics and Astronomy
| Identifer | oai:union.ndltd.org:BSU/oai:cardinalscholar.bsu.edu:handle/184951 |
| Date | January 1994 |
| Creators | Martin, Shashi A. |
| Contributors | Ball State University. Dept. of Physics and Astronomy., Cosby, Ronald M. |
| Source Sets | Ball State University |
| Detected Language | English |
| Format | xi, 78 leaves : ill. ; 28 cm. |
| Source | Virtual Press |
Page generated in 0.0014 seconds