The development of electronics has been growing at a fast rate in recent years. More and more ideas have been searched and are increasing at a faster rate. However, there is more detail work in the nanolevel or nanostructure yet to be understood. Thus, more and more semiconductor physicists have move to the new field of study in nanostructures. Nanostructures are the future of electronic devices. By understanding nanostructure electronic devices, electronics is the key for the progress of any modern equipment and advancement. This comes about when electronic transport of a nanostructure is thoroughly understood. Thus, future electronic devices can utilize the development of conductance through components having dimensions on the nanometer scale.The objective of the proposed research project is to study electronic transport in a ring with an infinite potential barrier at the center and a modulated external potential in one of the arms. The relative phase between the two paths in this structure can be controlled by applying electrostatic potential in one of the arms. One can compare these types of systems with optical interferometers, where the phase difference between the two arms is controlled by changing the refractive index of one arm through the electro-optic effect. By modulating the potential in one arm of the ring, we will study the interference effect on conductance. The method of finding the conductance of a nanostructure will be using the recursive Green's function method. This includes finding transverse eigenvalues, eigenfunctions, and hopping integrals to determine Green's propagators. A FORTRAN 77 computer program is used for numerical calculations.These remarkable ultra-small and ultra-clean quantum systems are currently achieved due to significant technological advancement in fabrication. For ultra-small quantum devices, the theoretical understanding of device performance must be based on quantum carrier transport of confined electrons and holes in the channel. This theoretical research will lead to the understanding of the effects of geometry and impurities on transport of the carriers in the nanochannels. / Department of Physics and Astronomy
| Identifer | oai:union.ndltd.org:BSU/oai:cardinalscholar.bsu.edu:handle/186327 |
| Date | January 1998 |
| Creators | Anduwan, Gabriel A. Y. |
| Contributors | Khatun, Mahfuza |
| Source Sets | Ball State University |
| Detected Language | English |
| Format | xii, 118 leaves : ill. ; 28 cm. |
| Source | Virtual Press |
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