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Miniaturisation des capteurs MEMS et NEMS résonants en silicium : dispositifs, transduction, dynamique non-linéaire et applications

A large part of the activities described in what follows circle around a small number of questions: what is downscaling bene cial to in sensing? What is the technical and scienti c price one has to pay for downscaling? From a general point of view and at a very di erent scale, those are considerations close to the ITRS roadmap for More Moore in the MOS eld, and the tremendous research e orts and scienti c challenges demanded by the continuity of the Moore's law. Although the sensing eld may be included in the so-called More-Than-Moore movement, its evolution has been much less formalized than its MOS counterpart. This document will try to show how my activities modestly contributed to this dispersed e ort. As an introduction, a rst study will be brie y described in this chapter, study which was seminal for those activities as well as which of the group. A number of scienti c issues appear along this study: device physics, device structure, transduction, noise modelling, non-linearities. It is a good way to introduce how the document is structured: this is the work of a team, and the at least partially chronological order is nothing but a logical way to describe how this work have been part of the evolution of a team's work.

Identiferoai:union.ndltd.org:CCSD/oai:tel.archives-ouvertes.fr:tel-00740800
Date05 September 2012
CreatorsHentz, Sébastien
PublisherINSA de Lyon
Source SetsCCSD theses-EN-ligne, France
LanguageEnglish
Detected LanguageEnglish
Typehabilitation ࠤiriger des recherches

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