The doping of quasi-freestanding graphene (QFG) on H-terminated, Si-face 6H-, 4H-, and 3C-SiC is studied by angle-resolved photoelectron spectroscopy (ARPES) close to the Dirac point. Using semi-insulating as well as n-type doped substrates we shed light on the contributions to the charge carrier density in QFG caused by i) the spontaneous polarization of the substrate, and ii) the band alignment between the substrate and the graphene layer. In this way we provide quantitative support for the previously suggested model of polarization doping of graphene on SiC [Phys. Rev. Lett. 108, 246104 (2012)].
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:21188 |
| Date | 07 May 2018 |
| Creators | Mammadov, Samir, Ristein, Jürgen, Koch, Roland J., Ostler, Markus, Raidel, Christian, Wanke, Martina, Vasiliauskas, Remigijus, Yakimova, Rositza, Seyller, Thomas |
| Publisher | Technische Universität Chemnitz, IOP Publishing Ltd |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 10.1088/2053-1583/1/3/035003, 2053-1583, 2053-1583, 035003 |
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