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Determination of key device parameters for short- and long-channel Schottky-type carbon nanotube field-effect transistors

The Schottky barrier, contact resistance and carrier mobility in carbon nanotube (CNT) field-effect transistors (FETs) are discussed in detail in this thesis. Novel extraction methods and definitions are proposed for these parameters. A technology comparison with other emerging transistor technologies and a performance projection study are also presented. A Schottky barrier height extraction method for CNTFETs considering one-dimensional (1D) conditions is developed. The methodology is applied to simulation and experimental data of CNTFETs feasible for manufacturing. Y-function-based methods (YFMs) have been applied to simulation and experimental data in order to extract a contact resistance for CNTFETs. Both extraction methods are more efficient and accurate than other conventional approaches. Practical mobility expressions are derived for CNTFETs covering the ballistic as well as the non-ballistic transport regime which enable a straightforward evaluation of the transport in CNTs. They have been applied to simulation and experimental data of devices with different channel lengths and Schottky barrier heights. A comparison of fabricated emerging transistors based on similar criteria for various application scenarios reveals CNTFETs as promising candidates to compete with Si-based technologies in low-power static and dynamic applications. A performance projection study is suggested for specific applications in terms of the studied design parameters.
Date06 February 2020
CreatorsPacheco-Sánchez, Aníbal Uriel
ContributorsSchröter, Michael, Maneux, C., Technische Universität Dresden
PublisherTUD Press
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/publishedVersion, doc-type:doctoralThesis, info:eu-repo/semantics/doctoralThesis, doc-type:Text

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