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Novel Quantum Dot Based Memories with Many Days of Storage Time: Last Steps towards the Holy Grail?

The feasibility of the QD-Flash concept, its fast write and erase times, is demonstrated together with storage times of 4 days at room temperature. The storage time of holes in (InGa)Sb QDs embedded in a (AlGa)P matrix can be extended by growth modifications to 10 y. Tunneling structures were recently demonstrated to solve the trade-off conflict between storage time and erase time. A QD-NVSRAM is suggested to become the first commercial application.

Identiferoai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:76951
Date10 December 2021
CreatorsBimberg, D., Mikolajick, T., Wallart, X.
PublisherIEEE
Source SetsHochschulschriftenserver (HSSS) der SLUB Dresden
LanguageEnglish
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/acceptedVersion, doc-type:conferenceObject, info:eu-repo/semantics/conferenceObject, doc-type:Text
Rightsinfo:eu-repo/semantics/openAccess
Relation978-1-7281-4431-3, 10.1109/NVMTS47818.2019.8986178

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