The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011. They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techniques, a low dielectric constant and the resulting decreased depolarization field, and stronger resistance to hydrogen annealing. However, the wake-up effect, imprint, and insufficient endurance are remaining reliability issues. Therefore, this paper reviews two major aspects: the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material’s point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.
| Identifer | oai:union.ndltd.org:DRESDEN/oai:qucosa:de:qucosa:81486 |
| Date | 17 October 2022 |
| Creators | Park, Min Hyuk, Lee, Young Hwan, Mikolajick, Thomas, Schroeder, Uwe, Hwang, Cheol Seong |
| Publisher | Springer |
| Source Sets | Hochschulschriftenserver (HSSS) der SLUB Dresden |
| Language | English |
| Detected Language | English |
| Type | info:eu-repo/semantics/acceptedVersion, doc-type:article, info:eu-repo/semantics/article, doc-type:Text |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | 2159-6867, https://doi.org/10.1557/mrc.2018.175, info:eu-repo/grantAgreement/National Research Foundation of the South Korean government/Global Research Laboratory Program/2012 1A1A2040157/ |
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