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InP-based heterojunction bipolar transistors for high speed and RF power applications : advanced emitter-base designs

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Identiferoai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/13083
Date08 1900
CreatorsYi, Changhyun
PublisherGeorgia Institute of Technology
Source SetsGeorgia Tech Electronic Thesis and Dissertation Archive
Languageen_US
Detected LanguageEnglish
TypeDissertation
Format237 bytes, text/html
RightsAccess restricted to authorized Georgia Tech users only.

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