The epitaxial growth of GaN and A1GaN/GaN Heterostructure Field Effect Transistors (HFET) on Lithium Gallate (LiGaO₂) substrates

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1. http://hdl.handle.net/1853/13903
2. 662579

Identifer	oai:union.ndltd.org:GATECH/oai:smartech.gatech.edu:1853/13903
Date	12 1900
Creators	Kang, Sangbeom
Publisher	Georgia Institute of Technology
Source Sets	Georgia Tech Electronic Thesis and Dissertation Archive
Language	en_US
Detected Language	English
Type	Dissertation
Format	238 bytes, text/html
Rights	Access restricted to authorized Georgia Tech users only.