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Reliable gate dielectric for low-temperature thin-film transistors using plasma nitridation

published_or_final_version / Electrical and Electronic Engineering / Master / Master of Philosophy

  1. 10.5353/th_b3122659
  2. b3122659
Identiferoai:union.ndltd.org:HKU/oai:hub.hku.hk:10722/33659
Date January 2002
Creators柯展東, Or, Chin-tung, David.
ContributorsLai, PT
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Source SetsHong Kong University Theses
LanguageEnglish
Detected LanguageEnglish
TypePG_Thesis
Sourcehttp://hub.hku.hk/bib/B31226590
RightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works., Creative Commons: Attribution 3.0 Hong Kong License
RelationHKU Theses Online (HKUTO)

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