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Previous issue date: 2016-03-30 / The solar cell industry is based on manufacturing n+pp+ devices with phosphorus emitter and aluminum back surface field. Studies show that the exposure to solar radiation may cause the degradation of electrical characteristics of these devices, which does not occur in solar cells made with n-type silicon. Furthermore, ntype silicon has a highest minority carrier lifetime and it is less sensitive to the presence of impurities when compared to p-type substrates. With the goal of the development of p+nn+ solar cells, experimental manufacturing processes were carried out to produce devices with homogeneous emitter, obtained from BBr3 and spin-on dopant, selective emitter formed by laser radiation and deposition of the antireflection coating (AR) by evaporation and atmospheric pressure chemical vapor deposition (APCVD). In solar cells with homogeneous emitter formed by BBr3 and oxidation followed by annealing at 400 ?C with form ing gas provides a minimum
surface passivation. It was observed that the electrical characteristics of the solar cells manufactured in n-type solar grade silicon are highly affected by the number of high-temperature thermal steps. The maximum efficiency of solar cells with emitter formed by BBr3 was 12.7%. The open circuit voltage values of solar cells with selective emitter were less than 560 mV, indicating that deterioration of the melting region by the laser radiation occurs, and the best solar cell achieved 11.6% efficiency. In general, devices with homogeneous emitter formed by spin-on showed higher efficiencies compared to the others, reaching 14.3% for solar cells with front grid formed with the PV3N1 metal paste. The TiO2 AR coatings deposited by APCVD and with the annealing at temperature of 400 ?C res ults in surface passivation, increasing the efficiency of the devices to 0.5% (absolute), which does not occur in AR coatings deposited by evaporation. / A ind?stria de c?lulas solares est? baseada na fabrica??o de dispositivos com estrutura n+pp+, com emissor de f?sforo e campo retrodifusor de alum?nio. Estudos mostram que a exposi??o ? radia??o solar pode causar a degrada??o das caracter?sticas el?tricas destes dispositivos, o que n?o ocorre em c?lulas solares
fabricadas em sil?cio tipo n. Al?m disto, o sil?cio tipo n possui maior tempo de vida dos portadores de carga minorit?rios e ? menos afetado pela presen?a de impurezas quando comparado ao sil?cio tipo p. Com o objetivo de desenvolver c?lulas solares p+nn+, processos experimentais de fabrica??o foram realizados para dispositivos com emissor homog?neo, obtido a partir de BBr3 e dopantes depositados por spinon,
emissor seletivo formado por radia??o laser e deposi??o de filmes antirreflexo (AR) por evapora??o e deposi??o qu?mica em fase vapor (APCVD). Em c?lulas solares com emissor homog?neo formado por BBr3 foi observado que a oxida??o seguida de recozimento a 400 ?C com forming gas proporciona uma m?nima
passiva??o de superf?cie. Observou-se que as caracter?sticas el?tricas das c?lulas fabricadas em sil?cio grau solar tipo n s?o altamente afetadas pelo n?mero de passos t?rmicos de alta temperatura. A efici?ncia m?xima obtida em dispositivos com emissor formado por BBr3 foi de 12,7%. Os valores de tens?o de circuito aberto das c?lulas com emissores seletivos foram inferiores a 560 mV, indicando uma
deteriora??o na regi?o fundida pela radia??o laser, e a melhor c?lula solar atingiu 11,6% de efici?ncia. Em geral, os dispositivos com emissores homog?neos formados por spin-on apresentaram efici?ncias superiores em rela??o aos demais, atingindo 14,3% com metaliza??o frontal com a pasta met?lica PV3N1. Filmes AR de TiO2 depositados por APCVD e submetidos ao recozimento em temperaturas da ordem
de 400 ?C passivam a superf?cie, aumentando a efici ?ncia dos dispositivos em at? 0,5% (absoluto), o que n?o ocorre em filmes AR depositados por evapora??o.
| Identifer | oai:union.ndltd.org:IBICT/oai:tede2.pucrs.br:tede/6707 |
| Date | 30 March 2016 |
| Creators | Garcia, S?rgio Boscato |
| Contributors | Moehlecke, Adriano, Zanesco, Izete |
| Publisher | Pontif?cia Universidade Cat?lica do Rio Grande do Sul, Programa de P?s-Gradua??o em Engenharia e Tecnologia de Materiais, PUCRS, Brasil, Faculdade de Engenharia |
| Source Sets | IBICT Brazilian ETDs |
| Language | Portuguese |
| Detected Language | English |
| Type | info:eu-repo/semantics/publishedVersion, info:eu-repo/semantics/doctoralThesis |
| Format | application/pdf |
| Source | reponame:Biblioteca Digital de Teses e Dissertações da PUC_RS, instname:Pontifícia Universidade Católica do Rio Grande do Sul, instacron:PUC_RS |
| Rights | info:eu-repo/semantics/openAccess |
| Relation | -7432719344215120122, 600, 600, 600, -655770572761439785, 4518971056484826825 |
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