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Towards an erbium-doped waveguide amplifier sensitized by silicon nanoclusters

Amorphous and crystalline silicon nanocomposites have been shown to act as effective “sensitizers” for erbium ions. In the present work, a series of erbium-doped (0.2 at.%) SiOx:Er films (x = 1 - 1.8) were synthesized by physical vapor deposition and subsequently annealed at temperatures ranging from 400°C to 1100°C to induce phase separation and cluster growth. Silicon nanocluster (Si-NC) and Er3+
photoluminescence intensity spectra and dynamics were investigated as a function of SiOx composition, annealing temperature, pump wavelength and power, and specimen temperature in order to determine characteristic cross-sections and to map the efficiency of the energy transfer process between Si-NCs and Er3+ ions. Additionally, two types of optical waveguides based on SiOx:Er materials were fabricated using conventional CMOS compatible microfabrication processes. Waveguide propagation losses as well as signal absorption and enhancement were investigated
under pumping conditions to evaluate the use of SiOx:Er materials as amplifying media. / Communications and Signal Processing

Identiferoai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:AEU.10048/466
Date11 1900
CreatorsLenz, Florian Christoph
ContributorsDeCorby, Raymond (Electrical and Computer Engineering), Meldrum, Al (Physics), McMullin, James (Electrical and Computer Engineering), Veinot, Jonathan (Chemistry)
Source SetsLibrary and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada
LanguageEnglish
Detected LanguageEnglish
TypeThesis
Format68103955 bytes, application/pdf
RelationF. Lenz, R. DeCorby, and A. Meldrum, “Sensitization efficiencies in Er-doped SiOx films containing amorphous or crystalline silicon nanoclusters”, physica solidi (a), Vol. 206 (5), pp. 989-992, 2009.

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