Organic field-effect transistors (OFETs) with region-regular poly(3-hexylthiophene) (rr-P3HT) as active semiconductor were fabricated and characterized. Various methods for improving device performance were investigated. These methods include: the use of dip coating technique (rather than spin coating), thermal annealing, polymer doping with iron chloride (FeCl 3), and stamping of "dry" poly(dimethylsiloxane) (PDMS) stamp before polymer deposition. / Through experimental results, it is clear that thermal annealing increases charge carrier mobility of P3HT OFETs. On average an increase of four times in charge mobility was observed after thermal annealing was performed. Dip coated samples also resulted in higher mobility values than spin coated samples. Highest charge mobility value achieved were was ∼0.02 cm2/Vs for dip coated samples, where as the highest value for spin coated devices was around 6e-3 cm2/Vs. / "Dry" stamping of a PDMS devices yielded devices with higher mobility values by around 100% compared to unstamped counterparts. These devices also exhibited lower parasitic leakage currents. / Devices doped with FeCl3 did not perform very well. It is suspected that it was increased so much that it became impossible to turn off the devices.
| Identifer | oai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:QMM.100224 |
| Date | January 2007 |
| Creators | Chien, Yu-Mo, 1980- |
| Publisher | McGill University |
| Source Sets | Library and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada |
| Language | English |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
| Format | application/pdf |
| Coverage | Master of Engineering (Department of Electrical and Computer Engineering.) |
| Rights | © Yu-Mo Chien, 2007 |
| Relation | alephsysno: 002665994, proquestno: AAIMR38481, Theses scanned by UMI/ProQuest. |
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