Return to search

Theory of the diode surface-wave storage correlator

A detailed theoretical study for the operation of the surface-acoustic-wave diode storage correlator is presented. A circuit model describing the device is developed which is used to analyze the signal storage characteristics and the different read-out modes of operation for both p-n and Schottky diode structures. The calculated predictions of the proposed theory are in excellent agreement with experimental data published by independent researchers. The theory presented is self consistent and takes into account, for the first time, the minority carrier lifetime in the dynamics of charging the p-n diode structures which was neglected in previous theories. A straightforward transmission line theory approach is developed for finding the surface-wave amplitude excited by the diode potential during the read-out process. The frequency response characteristics predicted for these structures is a fairly slowly varying function of frequency; hence such correlators are essentially bandlimited by the input and output surface-wave transducers.

Identiferoai:union.ndltd.org:LACETR/oai:collectionscanada.gc.ca:QMM.68558
Date January 1980
CreatorsEl Nokali, Mahmoud Ahmed
PublisherMcGill University
Source SetsLibrary and Archives Canada ETDs Repository / Centre d'archives des thèses électroniques de Bibliothèque et Archives Canada
LanguageEnglish
Detected LanguageEnglish
TypeElectronic Thesis or Dissertation
Formatapplication/pdf
CoverageDoctor of Philosophy (Department of Electrical Engineering)
RightsAll items in eScholarship@McGill are protected by copyright with all rights reserved unless otherwise indicated.
Relationalephsysno: 000112644, proquestno: AAINK51945, Theses scanned by UMI/ProQuest.

Page generated in 0.1805 seconds