A method was developed for finding charge and current distribution in nanoscale
electronic devices such as MOS capacitors and resonant tunneling diodes.
A system of differential equations, comprised of the Poisson and Schrödinger
equations, was solved iteratively to find the electric field and charge distribution
inside devices under simulation. The proposed solution method was based on the
non-equilibrium Green’s function approach, but expands on that approach by
using spatially varying quasi-Fermi levels to construct density operators.
The proposed method was applied to several example device models. The
simulation results are presented. Calculated charge distributions in FET transistors
were found to have necessary features: for example, the results showed inversion
layer formation. However, the calculated current-voltage curves differed
significantly from published experimental results and other simulators.
Other published methods for charge transport simulation are compared to the
proposed method.
| Identifer | oai:union.ndltd.org:MANITOBA/oai:mspace.lib.umanitoba.ca:1993/5290 |
| Date | 11 April 2012 |
| Creators | Wiebe, Daniel |
| Contributors | Buchanan, Douglas (Electrical and Computer Engineering), Arino, Julien (Mathematics); Oliver, Derek (Electrical and Computer Engineering) |
| Source Sets | University of Manitoba Canada |
| Detected Language | English |
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