An curvature measurement technique was used to characterize the stress evolution during reaction of a Ni film and a silicon substrate to form nickel silicide. Stress changes were measured at each stage of the silicide growth. When the nickel films were subjected to long-time isothermal annealing, stresses that developed during silicide formation gradually relaxed. Fitting the experimental results with a kinetic model provides insight into the volumetric strain and relaxation behavior of the reacting film and the reaction product. / Singapore-MIT Alliance (SMA)
| Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3658 |
| Date | 01 1900 |
| Creators | Liew, K.P., Li, Yi, Yeadon, Mark, Bernstein, R., Thompson, Carl V. |
| Source Sets | M.I.T. Theses and Dissertation |
| Language | en_US |
| Detected Language | English |
| Type | Article |
| Format | 379507 bytes, application/pdf |
| Relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); |
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