The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using in situ annealing at 400°C, Ni₃Ge₂ and NiGe were observed. For the interfacial reaction of Ni with relaxed Si₀.₇₅Ge₀.₂₅ films rapid thermal annealed at 400°C, a mixed layer consisting of Ni₃(Si₁âxGex)₂, Ni(Si₁âyGey), and Si₁âzGez (z>y>x) was formed; whereas only Ni₃(Si₁âxGex)₂ and Ni(Si₁âyGey>) were observed by in situ annealing. / Singapore-MIT Alliance (SMA)
| Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3724 |
| Date | 01 1900 |
| Creators | Jin, Lijuan, Pey, Kin Leong, Choi, Wee Kiong, Fitzgerald, Eugene A., Antoniadis, Dimitri A., Pitera, Arthur J., Lee, Minjoo L., Chi, D.Z. |
| Source Sets | M.I.T. Theses and Dissertation |
| Language | en_US |
| Detected Language | English |
| Type | Article |
| Format | 1386604 bytes, application/pdf |
| Relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); |
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