Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For dotted-i structures in the second metal layer (M2) and with 25µm-long segments length, failures occurred even when the product of the current density and segment length (jL) was as low as 1250A/cm, even though via terminated 25µm-long lines are "immortal" when (jL)cr < 1500 A/cm. Moreover, we found the mortalities of the dotted-I segments to be dependent on the current density and current direction in the adjacent segment. These result suggest that there is not a definite value of jL product that defines true immortality in individual segments that are part of an interconnect tree, and that the critical value of jL for Cu dual damascene segments is dependent on the magnitude and direction of current flow in adjacent segments. Therefore, (jL)cr values determined in two-terminal via-terminated lines cannot be directly applied to interconnects with branched segments, but rather the magnitude as well as the direction of the current flow in the adjoining segments must be taken into consideration in determining the immortality of interconnect segments. / Singapore-MIT Alliance (SMA)
| Identifer | oai:union.ndltd.org:MIT/oai:dspace.mit.edu:1721.1/3835 |
| Date | 01 1900 |
| Creators | Chang, Choon Wai, Gan, C.L., Thompson, Carl V., Pey, Kin Leong, Choi, Wee Kiong, Hwang, N. |
| Source Sets | M.I.T. Theses and Dissertation |
| Language | en_US |
| Detected Language | English |
| Type | Article |
| Format | 71392 bytes, application/pdf |
| Relation | Advanced Materials for Micro- and Nano-Systems (AMMNS); |
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