High-voltage SiC Schottky barrier diodes have been fabricated with 1mm square contacts. The SBD?s were fabricated using both an argon implant and a field plate overlap for edge termination. The Versatile Automated Semiconductor Testing and Characterization system was designed to fully test and characterize these devices with as little human interaction as possible. The focus of this thesis is to discuss the usefulness of the VASTAC system. Emphasis is placed on it?s versatility derived from a modular design allowing the system to perform a variety of tests. Specifically, the testing and characterization of silicon carbide Schottky Barrier Diodes will be discussed in relation to the systems performance, cost, and the time it takes to test a wafer.
| Identifer | oai:union.ndltd.org:MSSTATE/oai:scholarsjunction.msstate.edu:td-5959 |
| Date | 14 December 2001 |
| Creators | Parker, Danny Loren |
| Publisher | Scholars Junction |
| Source Sets | Mississippi State University |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | Theses and Dissertations |
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