We invistegated the characteristic of GaN grown on LiAlO2 substrate by molecular epitaxy beam. First of all , we try to changed the growth ratio and concluded some relation between the quality of thin film. We expect to improve the quality of M-plane GaN and the size and density of c-plane GaN single-crystals by changing growth conditions. we found that when the N / Ga flow ratio decreased, that is much favor to the growth of M-plane GaN, is not favor to the growth of c-plane GaN.
Further research indicates that, on entering the PA-MBE growth prior to phosphoric acid ratio of 1:50 with water to etch the surface of LAO substrate for a minute, is more suitable for M-plane GaN growth, can effectively inhibit Growth of c-plane GaN.
The last series of samples, we will LAO substrate into PA-MBE system, DI water before soaking for ten minutes, we found the study can help to improve the c-plane GaN growth.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0121111-215031 |
| Date | 21 January 2011 |
| Creators | Wu, Hao-Fei |
| Contributors | Jenn-Kai Tsai, Ikai Lo, Der-Jun Jang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031 |
| Rights | withheld, Copyright information available at source archive |
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