Indium tin oxide (ITO) films were deposited onto the glass substrate by rf reactive magnetron sputtering method. Deposition was performed by changing processing conditions, such as rf power, process pressure and substrate temperature. The structural, optical and electrical properties of ITO films have been characterized by X-ray diffraction, optical transmittance and sheet resistance.
In the process of ITO deposition, we change rf power and fix process pressure at room temperature. And we change process pressure after finding low sheet resistance by changing rf power at room temperature. The low sheet resistance of 35 £[/¡¼ was obtained at room temperature.
In addition, we change the substrate temperature while keeping the same rf power and process pressure. When the temperature is 400¢J, the sheet resistance as low as 6.98 £[/¡¼ was obtained. The diffraction peaks on (211), (222), (400), and (440) directions were observed by XRD analysis. Under high temperature (300¢J) deposition the transmittance and diffraction peaks of the films were found to change with different rf power and process pressure. However, the sheet resistances are about the same during the interest for both rf power and process pressure. The UV-visible spectra indicate that the optical transmittance of all the films is between 65 % ~ 90 % at visible range.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0613105-220306 |
| Date | 13 June 2005 |
| Creators | Ma, Hung-jen |
| Contributors | Chien-hsiang Chao, Ann-kuo Chu, Miao-Ju Chuang, Mei-ying Chang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0613105-220306 |
| Rights | off_campus_withheld, Copyright information available at source archive |
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