Transparent InO (Indium oxide) thin-film transistors fabricated by reactive ratio frequency (rf) magnetron sputtering at room temperature were demonstrated on glass and plastic substrates. The resistivity, transmittance, X-ray diffraction pattern, and surface morphology of the films prepared at a 50% oxygen partial pressure were investigated, the resistivity and the average transmittance of the films were 4.2¡Ñ104 £[-cm and 87 %, respectively. In addition, Indium tin oxide (ITO) and silicon nitride (SiNX) thin films were used as the electrode and gate insulator. The resistivity and the average transmittance of ITO electrodes were 7¡Ñ10-4 £[-cm and 85%. On the other hand, the maximum leakage current of less than 10-9A/cm2 was obtained for the SiNX layer at an electric field of 1 MV/cm.
For the InO TFT on glass substrate with 6 £gm channel length and 20 £gm channel width, the measured saturation mobility, threshold voltage, on/off ratio and subthreshold swing are 9.39V-1s-1, 1.5V, 2.2¡Ñ107and 0.5 V/decade. For the TFTs prepared on plastic substrate, the measured saturation mobility, threshold voltage, on/off ratio and subthreshold swing are 8.19V-1s-1, 1.83V, 1.43.¡Ñ106and 0.8 V/decade, respectively.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0619109-181220 |
| Date | 19 June 2009 |
| Creators | Huang, Shih-Yu |
| Contributors | Ting-Chang Chang, Ann-Kuo Chu, Chao-Kuei Lee, Wen-Yao Huang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0619109-181220 |
| Rights | withheld, Copyright information available at source archive |
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