ABSTRACT
High quality ZnS0.06Se0.94 epilayer which was lattice-matched to GaAs substrate has been prepared. The sulfur composition x was 0.06 has been determined by EPMA. The FWHM of X-ray diffraction was 187.2 arcsec. Its R-value was 5.191%.
High quality ZnS0.06Se0.94:N epilayer which was lattice-matched to GaAs substrate has been prepared. The FWHM of X-ray diffraction was 169.2 arcsec. Its R-value was 3.521%.
ITO film formed by thermal evaporated In-Sn alloy first, then annealing in O2 atmosphere. The conductivity and transparency of ITO have been trade-off at acceptable parameter. Because of the highest current in I-V characteristic in the structure of ITO/ZnS0.06Se0.94:N, we optimized the annealing temperature and time at 450¢J for 60min in O2 atmosphere. Because of the excellent transparency and conductivity in the structure of ITO/Glass, we optimized the annealing temperature and time at 650¢J for 60min in O2 atmosphere.
The requirements for an excellent ohmic contact for ZnSe-based blue LED are: (1) transparent (2) low contact resistance (3) good for bonding (4) low melting point. For (1), Tin-doped indium oxide (ITO) is the only good choice.
In this study, ITO/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au-Zn double heterojunction (DH) structure has been prepared after annealing In-Sn/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au-Zn in O2 atmosphere. I-V characteristic of DH junction structure shows a diode electric property.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0627101-132136 |
| Date | 27 June 2001 |
| Creators | Shih, Tsung-Hsiang |
| Contributors | Ming Kwei Lee, Wen Tai Lin, Jing Gong, Tsu Hsin Chang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627101-132136 |
| Rights | restricted, Copyright information available at source archive |
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