We study the electronic band structure of no-common-atom InAs-GaSb superlattice within a nearest-neighbor bond-orbital model. The effect of interfacial asymmetry is also taken into account. This model can reproduce fairly accurate bulk band structures near the center of the Brillouin zone. We find that interfacial asymmetry, which is first included in bond-orbital model, can yield spin splitting. We also find that a negative indirect band gap appears for long period superlattice, due to interfacial asymmetry and band anisotropy of the heavy hole band in GaSb material. This indicates that the semiconductor-semimetal transition, which occurs when the period d reach a critical value dC, does exist in InAs-GaSb superlattice. In our calculation, the critical period dC is about 150 Å.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0627101-172527 |
| Date | 27 June 2001 |
| Creators | Lee, Tzu-Yao |
| Contributors | I-Min Jiang, Jiann-Shing Shyu, Jih-Chen Chaing |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627101-172527 |
| Rights | withheld, Copyright information available at source archive |
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