AlN thin films grown on GaN/Sapphire substrate by RF magnetron sputtering technique with AlN target has been studied. Simple MIS capacitor was fabricated in order to evaluate the electrical properties of AlN films that played as a insulator.
Various microstructures of AlN thin films can be obtained by controlling the growth parameters, such as sputtering powers, sputtering distances and working pressure. The microstructures of the AlN films were examined by X-ray diffraction. The observation of the surface morphology ,the distribution of defects and the interface of AlN/GaN were performed by transmission electron microscopy.
The results showed that the amorphous AlN thin films were obtained with a 21cm long sputtering working distance and under the 100W sputtering power and 8mtorr working pressure conditions.
The results of the C-V measurement indicated that the MIS device demonstrated a capacitor behavior, however a large leak current showed up in the end. The quality of the AlN films and the process procedures of MIS device still need be improved further.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0628101-170016 |
| Date | 28 June 2001 |
| Creators | Shen, Kuo-Hsu |
| Contributors | Li-Wei Tu, K. Y. Hsieh, Bae-Heng Tseng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628101-170016 |
| Rights | unrestricted, Copyright information available at source archive |
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