The area of advanced gate dielectrics has gained considerable attention recently because semiconductor technology roadmaps predict for less than 2 nm equivalent oxide thickness (EOT) for next 10 years, and there are significant leakage current and reliability concerns for oxy-nitride in this regime. So it¡¦s an important business to use alternate high-k dielectrics instead of oxy-nitride.
Titanium silicon oxide shows a low leakage current with a high dielectric constant for dielectric applications. Besides, barium doping can create additional oxygen vacancies that can enhance dielectric constant. In this study, we prepared barium doped titanium silicon by liquid phase deposition which is a novel material considered to have intermediate properties of silicon dioxide and titanium dioxide. From several characteristic measurements, we found that barium doped titanium silicon oxide with exhibiting higher dielectric constant, low leakage current and well interface state which is very promising candidates to instead of titanium silicon oxide.
The physical and chemical properties of barium doped titanium silicon oxide films by means of several measuring instruments, including Fourier transform infrared spectrometer (FTIR), secondary ion spectrometer (SIMS), and X-Ray diffractometer (XRD). An Al / Ba doped titanium silicon oxide / Si metal-oxide-semiconductor (MOS) capacitor structure was used for the electrical measurements.
The static dielectric constant of the O2-annealed barium doped titanium silicon oxide film can reach about 22.3. In addition, it has well leakage current density of 2.6 ¡Ñ 10-6 A/cm2 at 5 MV/cm with the equivalent oxide thickness 1.27 nm (optical thickness of 7.3 nm). It has high potential for dielectric applications.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0706104-092815 |
| Date | 06 July 2004 |
| Creators | Yu, Chia-ming |
| Contributors | Yu-hao Yang, Tsong-sheng Lay, Tao-yuan Chang, Ming-kwei Lee |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-092815 |
| Rights | withheld, Copyright information available at source archive |
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