There are two sections in this thesis, the first section we measured the photoluminescence (PL) spectra¡Bphotocurrent spectra and electro absorption spectra of InGaAsN single quantum well structures grown by MBE. From temperature-dependent PL spectra of InGaAsN, we observed a localized level at low temperature, and the carrier localization effect increases when the mole fraction of nitrogen increases (2.1%~3.25%). This peculiarity influences the PL peak position and the PL linewidth, and it can be improved by adequate annealing. We also obtained the activation energies about 52~59meV by Arrhenius plot and thermal quenching model. For the photocurrent spectra we observe the sub-band transition and quantum confined stark effect. From the electro-absorption spectra, we obtain the maximum absorption changes (
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0708104-133927 |
| Date | 08 July 2004 |
| Creators | Kong, Kou-ming |
| Contributors | Tsong-sheng Lay, Kuo-jui Lin, Tao-yuan Chang, Ching-ting Lee, Lung-han Peng |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708104-133927 |
| Rights | not_available, Copyright information available at source archive |
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