In this experiment the characteristics and microstructure of ZrN films between Si and Cu or Al were investigated. The ZrN films were deposited by RF magnetron reactive sputtering system. The ZrN films were annealed at various temperatures in order to observe the grain growth and the inter-diffusion of atoms between interfaces.
X-ray analysis showed that in the ZrN/Al system the ZrN film has¡]220¡^preferred orientation after annealing at 600¢J for 1 hour. In the Al/ZrN/Si system of the same annealing condition, the ZrN film showed ¡]200¡^preferred orientation with the concurrent formation of the ZrSi2 and AlN phases. In the Cu/ZrN/Si system, the Cu film showed ¡]111¡^preferred orientation after annealing at 700¢J for 1 hour.
TEM analysis showed that in the ZrN/Al system there were no Al-Zr compound was found after annealing at 600¢J for 1 hour. In the Al/ZrN/Si system, although ZrSi2¡BAlN and£\-Si3N4 were present after annealing at 600 ¢J for 1.5 hour, but the diffusion barrier is still effective. In the Cu/ZrN/Si system the CuZr2 was formed after annealing at 700¢J for 1 hour, but the diffusion barrier is also still effective. The results up to now suggest that ZrN layer can be a successful candidate as a diffusion barrier between Si and Cu or Al.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0709103-170420 |
| Date | 09 July 2003 |
| Creators | Weng, Wei-Chi |
| Contributors | Der-Shin Gan, Pou-Yan Shen, Ker-Chang Hsieh |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709103-170420 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.0024 seconds