Abstract
We discuss the PL spectra of Ga2O3(Gd2O3)/GaAs/In0.2Ga0.8As/GaAs quantum well with different annealing temperatures. First, we discuss the peak position of PL spectra. The peaks shift with different annealing temperatures, and it is due to the quantum well intermixing. Second, the excitation density dependence of In0.2Ga0.8As/GaAs quantum well is performed. We discuss the difference of 2D transition for quantum well and 3D transition for bulk GaAs.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0710102-152429 |
| Date | 10 July 2002 |
| Creators | Hsu, Ming-Kai |
| Contributors | Li-Wei Tu, Tsong-Sheng Lay, T.Y.Chang, Y. T. Lu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710102-152429 |
| Rights | unrestricted, Copyright information available at source archive |
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