The temperature-dependent Hall measurement was performed on the undoped GaN thin films grown by molecular beam epitaxy. The mobility and electron density were obtained by the T-dependent ( 4.2K~300K ) Hall measurement at magnetic field 300mT. Since the Hall coefficient is the ratio of the perpendicular electric field to the product of current density and magnetic field, we calculate the mobility and electron density to get the temperature-dependent mobility and electron density curves.
We change the N/Ga ratio on the epilayer of two samples and analysis the mobility and carrier density against temperature. The sample growth procedure were (1)nitridation for 60 min, with ,at .(2) low temperature GaN buffer layer growth for 2 min, with ,at , and (3)high temperature GaN epilayer growth for 3hr, at . The N/Ga ratio of the samples are 30 and 35.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0712104-002217 |
| Date | 12 July 2004 |
| Creators | Li, Yen-Chi |
| Contributors | Ikai Lo, Yan-Ten Lu, Li-Wei Tu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712104-002217 |
| Rights | withheld, Copyright information available at source archive |
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