The materials based on GaN have successfully developed on short-wavelength laser diodes (LDs), light-emitting diodes (LEDs) and ultraviolet photodetector. In this study, GaN epitaxial layers have been successfully grown on sapphire substrates. We used several methods including the growth temperature and time of amorphous nucleation layer before growing epilayer and the growth temperature of GaN epilayer to study it. From the results of the photoluminescence (PL) measured at 77K, the X-Ray diffraction measurement, SEM cross sectional views to realize the characteristic and we get a better qualities of GaN epilayers after using the foregoing methods. In this study, the re-crystallization of the amorphous nucleation layer would occur while temperature re-rise to high temperature, and the phenomenon have different crystallinity under the different growth conditions of nucleation layer, which influence the quality and morphology of GaN epilayers seriously. According to the results of the experiments, we study the mechanisms of yellows luminescence and donor-acceptor pair.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0713104-145557 |
| Date | 13 July 2004 |
| Creators | Chen, Chia-lin |
| Contributors | Ming-Kwei Lee, Tsu-Hsin Chang, Jeng Gong, Wen-Tai Lin |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713104-145557 |
| Rights | not_available, Copyright information available at source archive |
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