A novel CMOS tunable bandpass filter and a novel voltage controlled oscillator are proposed. Both circuits are designed using the UMC 0.5£gm CMOS process parameters. The CMOS tunablebandpass filter is realised by using the intrinic parasitic capacitance of the MOS transistor. This filter has neither on-chip planar inductor nor poly-capacitance; therefore, the chip area is reduced. Simulation results show that the bandpass filter is tunable in the range between 190MHz and 347MHz. Therefore, the filter is suitable for the IF filter application that is between 200MHz and 300MHz. The Q-factor is also tunable and has a maximum value of 983. Applying the circuit of the bandpass filter, a second order voltage controlled oscillator is designed. Simulation results show that the voltage controllable oscillator is tunable in the range between 444MHz and 746MHz.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0716101-111219 |
| Date | 16 July 2001 |
| Creators | Chien, Yu |
| Contributors | Jinn-Shyan Wang, Yao-Tsung Tsai, Jyi-Tsong Lin, Chia-Hsiung Kao |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716101-111219 |
| Rights | withheld, Copyright information available at source archive |
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