¡uGaAs VCSEL Contact Process and Feature Analysis ¡vIn this article, we
talk about the process of metalization on sample of epied GaAs VCSEL
structure. We deposit Au/Ge-Au on n-GaAs substrate for n-type contact ¡Fand
Au/Be-Au on p-DBR for p-type contact by thermal evaporation. To lower
threshold current, and increase laser output power, ohmic contact is a necessary
condition. Furthermore a lot of analysis is done for injection current-EL
spectrum; VCSEL structure-EL spectrum; output aperture-laser output power.
And check the laser mode with gain Spectrum ¡Bresonant cavity mode ¡B
spontaneous emission of active layer. Throughout the analysis mention above,
we hope to find a reasonable and reliable way of VCSEL structure design, so
that we can reduce the heat effect to vertical cavity surface emitting laser.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0720100-170156 |
| Date | 20 July 2000 |
| Creators | Lai, Chih-Ming |
| Contributors | Li-Wei Tu, Yan-Ten Lu, Ikai Lo |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156 |
| Rights | off_campus_withheld, Copyright information available at source archive |
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