Diamond-Like Carbon (DLC) films have been deposited on different substrates such as p-type Silicon substrate and ITO glass substrate. DLC thin film was electrodeposited at low DC potential using a mixture of acetic acid and DI water. The DLC film deposition parameters include DC potential, deposited temperature, solution concentration, are used to study the characteristics of DLC film in detail. In addition, the growth mechanism of deposition process is also discussed. We are to improve and to solve the edge induced effect on inhomogeneous film thickness during electrodeposition. The Raman spectra shows two peaks located near 1358cm-1 and 1580cm-1, assigned as the characteristics peaks of DLC films. That is an evidence for DLC film deposited successfully on ITO glass and Silicon substrates. Scanning electron microscopy (SEM) can make insight into accurately the surface morphology and uniformity of DLC films so as used to grow the best quality of DLC films. Finally, N-type of doped DLC films has been achieved on p-type silicon substrate to form the hetero-junction diode, and the intrinsic DLC film acts as the insulating layer for MIS structure is also obtained. The electrical characteristics of hetero-junction diode and MIS devices are presented and to be discussed in future.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0725108-123138 |
| Date | 25 July 2008 |
| Creators | Shr, Ge-Jian |
| Contributors | Wei-Chou Hsu, Yuh-Fung Huang, Herng-Yih Ueng, Yeu-Long Jiang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725108-123138 |
| Rights | not_available, Copyright information available at source archive |
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