Low-cost and high-efficiency are of continuous interest for the fabrication of solar cells. I-III-VI compound semiconductors Cu(In,Ga)Se2 (CIGS) are the most important absorber materials in developing thin film solar cells. The bandgap of CIGS varies from about 1.1 to 1.7 eV, which is within the maximum solar absorption region. This is very important for the optimum conversion efficiency. The extraordinarily high absorption coefficient from direct bandgap leads to thinner thickness and lower fabrication cost for its use in thin film solar cells. In this experiment, we deposit CuInGa alloy layer on Mo-coated soda-lime glass by RF sputtering and then use selenization process to form Cu(In,Ga)Se2. We study the characterization of sputtered CIG alloy layer and selenized CIGS thin film.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0725112-151422 |
| Date | 25 July 2012 |
| Creators | Li, Kuan-Hsien |
| Contributors | Ming-Kwei Lee, Kuo-Mei Chen, Min-Yen Yeh, Su-Hua Yang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | English |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-151422 |
| Rights | user_define, Copyright information available at source archive |
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