Using a numerical method to simulate the Metal-Organic
Chemical Vapor Deposition (MOCVD). A study of the GaN films were growth on sapphire substrates, and a new design method which The position of carrier gas inlets and outlets, the gas in inlets by a showerhead reactor, the modified susceptor. The purpose of this research is to maintain deposited GaN film thickness variation range by controlling those parameters which may affect the deposition.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0726104-143956 |
| Date | 26 July 2004 |
| Creators | Kuo, Feng-Ming |
| Contributors | Tai-Fa Young, Charlie Chang, Jen-Jyh Hwang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726104-143956 |
| Rights | unrestricted, Copyright information available at source archive |
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