In this paper we will discuss the characteristic of AlGaN/GaN heterostructure grown on sapphire by plasma-assisted molecular-beam epitaxy.
In this series of samples, we try to change the ratio of buffer layer N/Al, the ratio from sample A to sample D is 43¡B26¡B23¡B12. We used the Hall measurement¡BAFM and X-ray to analyze the series of samples. From the Hall measurement and AFM, we found that the dislocation scattering is the mainly reason which cause the mobility increasing or decreasing. From X-ray, we can get that the mainly dislocation type is edge dislocation.
The density of edge dislocation decreased due to vary the growth conditions. In our samples, the mobility in the room temperature increase from 387 cm2/Vs to 1224 cm2/Vs and in the liquid nitrogen temperature the mobility achieve 3705 cm2/Vs.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0726107-115651 |
| Date | 26 July 2007 |
| Creators | Hsu, Yu-Chi |
| Contributors | Ming-Kwei Lee, Ikai Lo, Jih-Chen Chiang |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-115651 |
| Rights | not_available, Copyright information available at source archive |
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