Abstract
In this thesis, We have probed the semiconductor
microstructure by photoreflectance. A laser beam was used to modulate the dielectric constant and the parameter £GR and R were probed with a white light source.
First, we perform measurement and simulation for a single quantum well structure grown by molecular beam epitaxy(MBE).Three subband transition can be found in our simulation, and a 2D third derivative model was used to fit experiment data. For the absorption coefficient and refractive index, we perform a simulation with a ideal
model ( i.e. FWHM=0). In the simulation, we can understand that the photoreflectance spectrum is composed with symmetric and anti-symmetric line shapes in our fitting model. In addition, we can observe FKO effect in this sample and obtain electric field from FKO data.
For asymmetric InGaAs/InGaAlAs multiple-quantum wells, we perform measurement, simulation and curve fitting for both modulation doping and non-modulation doping samples. We can observe many high order sub-band transitions. Besides, some quantum well signals for the modulation doped samples were not observed due to the cancellation of build-in electric field.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0727105-140108 |
| Date | 27 July 2005 |
| Creators | Ting, Chi-Jen |
| Contributors | Ming-Hua Mao, Tsong-Sheng Lay, Shoou-Jinn Chang, Tao-Yuan Chang, Hao-Chung Kuo |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0727105-140108 |
| Rights | not_available, Copyright information available at source archive |
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