The electronic properties of the defects of the GaN/Si(111) system has been successfully measured by STM in the work. Different types of the dislocations in GaN films, such as edge dislocations and screw dislocations, have been observed. Defects induce the change of the band gap from 3.4 eV to 2.2 eV. The characteristic scattering length of the edge dislocation is around 25 nm.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0728109-191606 |
| Date | 28 July 2009 |
| Creators | Chen, Bo-Chih |
| Contributors | L. W. Tu, Ya-Ping Chiu, Chung-Lin Wu, Yi-Chun Chen |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-191606 |
| Rights | withheld, Copyright information available at source archive |
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