In this work, a quantum well intermixing(QWI) technology, called impurity free vacancy diffusion(IFVD), is used to do the bandgap engineering in an optoelectronic monolithic integration. The monolithic integration of SOAs and EAMs is taken as an example. By IFVD, the transition energy levels of EAM quantum wells can be shifted to shorter wavelength regime, while SOA quantum wells are kept the same. Therefore, the overall SOA-integrated EAM efficiency can be improved.
A 400nm thick SiO2 is sputtered at the EAM regions to locally create defects in the surface of pin InGaAsP/Imp layer structure. Rapid thermal Annealing (RTA) technique at 850oC is then used to inter-diffuse the atom of quantum wells. A SOA-integrated EAM is fabricated on such template. Ti/Pt/Au and Ni/AuGe/Ni/Au are used for p-type and n-type metallization. An optical waveguide structure is defined by selective undercut-etching active region. The PMGI is spun for planarization and bridging. A Ti/Au is finally deposited as microwave coplanar waveguide. A DC measurement of photocurrent spectrum is performed to examine the wavelength shift. A 10nm shift is found between EAM and SOA regions. Modulation efficiency of 15dB/V with extinction ratio of higher than 20dB is observed in EAM device. And the optical gain of SOA is found as 3dB at 1540nm excitation wavelength. -3dB bandwidth of 20GHz is obtained. In comparison with sample without intermixing, the same results are achieved in intermixing sample, suggesting no regrowth processing is needed for obtaining the same quality of optoelectronic integration.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0728109-193530 |
| Date | 28 July 2009 |
| Creators | Yan, Hung-jung |
| Contributors | Ann-Kuo Chu, Yi-Jen Chiu, Chao-Kuei Lee, Chin-Ping Yu |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-193530 |
| Rights | not_available, Copyright information available at source archive |
Page generated in 0.0018 seconds