Optical beam induced current (OBIC) mapping has found wide-spread applications in characterizing semiconductor devices and integrated circuitry. In this study, we have used a two-photon scanning microscope to investigate InGaN light emitting diodes (LED). The defects induced by electrostatic discharge (ESD) can be clearly identified by DC-OBIC images.
Additionally, we have combined an E-O modulator and a high frequency phase sensitive lock-in amplifier to conduct time-resolved study on the dynamical properties of the LEDs. The defects also exhibit different delay time when compared with the normal parts.
| Identifer | oai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0729109-112458 |
| Date | 29 July 2009 |
| Creators | Wang, Wei |
| Contributors | Wood-Hi Cheng, Tsong-Sheng Lay, Fu-Jen Kao, Shang-Ping Ying |
| Publisher | NSYSU |
| Source Sets | NSYSU Electronic Thesis and Dissertation Archive |
| Language | Cholon |
| Detected Language | English |
| Type | text |
| Format | application/pdf |
| Source | http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729109-112458 |
| Rights | off_campus_withheld, Copyright information available at source archive |
Page generated in 0.0025 seconds