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Mapping of ESD Induced Defects on LEDs with Optical Beam Induced Current Microscopy

Optical beam induced current (OBIC) mapping has found wide-spread applications in characterizing semiconductor devices and integrated circuitry. In this study, we have used a two-photon scanning microscope to investigate InGaN light emitting diodes (LED). The defects induced by electrostatic discharge (ESD) can be clearly identified by DC-OBIC images.
Additionally, we have combined an E-O modulator and a high frequency phase sensitive lock-in amplifier to conduct time-resolved study on the dynamical properties of the LEDs. The defects also exhibit different delay time when compared with the normal parts.

Identiferoai:union.ndltd.org:NSYSU/oai:NSYSU:etd-0729109-112458
Date29 July 2009
CreatorsWang, Wei
ContributorsWood-Hi Cheng, Tsong-Sheng Lay, Fu-Jen Kao, Shang-Ping Ying
PublisherNSYSU
Source SetsNSYSU Electronic Thesis and Dissertation Archive
LanguageCholon
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729109-112458
Rightsoff_campus_withheld, Copyright information available at source archive

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